FACULTY OF ENGINEERINGDEPARTMENT OF METALLURGICAL AND MATERIALS ENGINEERING


Bilge İmer

Assist. Prof. Dr. Bilge İmer
Room No: 
D-105
Telephone: 
+90 (312) 210-5849
Fax: 
+90 (312) 210-2518
E-mail: 
bimer@metu.edu.tr
Education: 

Ph.D.: 2006- University of California Santa Barbara, CA-USA

M.S.: 2006 – University of California Santa Barbara, CA-USA

B.S.: 2000 – University of Pittsburgh, PA – USA (Transferred from Middle East Technical University, Turkey

Research Interests: 

Thin film material (functional coatings, device structure) growth

Bulk crystal growth

Device and nano-structured materials clean-room processing, modeling, simulation and testing

Publications: 
  • ”Structural and electrical characterization of a-plane GaN grown on a-plane SiC”, M. D. Craven, A. Chakraborty, B. Imer, F. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, Phys. Stat. Sol. (c) 0, No. 7, 2132-2135, October 2003
  • “Microstructural evolution of a-plane GaN grown on a-plane SiC by Metalorganic chemical vapor deposition”, M. D. Craven, F. Wu, A. Chakraborty, B. Imer, U. K. Mishra, S. P. DenBaars, and J. S. Speck, Applied Physics Letters, Vol. 84, No.8, February 2004
  • ”Growth of thick (11-20) GaN using a metal interlayer”, P. R. Tavernier, B. Imer, S. P. DenBaars, and D. R. Clarke, Applied Physics Letters, Vol. 85, No. 20, November   2004
  • “Intensity Dependent Time-Resolved Photoluminescence Studies of GaN/AlGaN Multiple Quantum Wells of Varying Well Width on Laterally Overgrown a‑plane and Planar c-plane GaN “,(G. A. Garrett, H. Shen, W. Wraback) from U.S. Army Research Laboratory, Sensors and Electron Devices Directorate (B. Imer, B. Haskell, S. Keller, S. Nakamura, S. P.  DenBaars) from UCSB,  Physica Status Solidi (a), No. 5, 846 (2005)
  • “Polarized photoreflectance spectroscopy of strained A-plane GaN films on R-plane sapphire”, (Sandip Ghosh, Pranob Misra, and Holger T. Grahn) from Paul-Drude-Institut fur Festk¨orperelektronik, Berlin, Germany (Bilge Imer, Shuji Nakamura, S. P. DenBaars and J. S. Speck) from UCSB, J. of Appl. Phys.,98, 026105, July 2005
  • “Improved Quality Non-polar  a-plane GaN with Sidewall Lateral Epitaxial Overgrowth (SLEO)”,Bilge Imer, James S. Speck, Steven P. DenBaars,  Applied Physics Letters, Vol. 88, Number 6-061908, February 2006
  • “Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells”, (S. Rudin, G. A. Garrett, H. Shen, M. Wraback) from U.S. Army Research Laboratort, Sensors and Electronic Devices Directorate ( B. Imer, B. Haskell, J. S. Speck, S. Keller, S. Nakamura, and S. P. DenBaars) from UCSB,  IEEE International Semiconductor Device Research Symposium, 2005 International Proceedings, Dec 7-9, 2005, pp. 225 -226
  • “Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy”,(Pranob Misra, Udo Behn, Oliver Brandt and Holger T. Grahn) from Paul-Drude-Institut fur Festk¨orperelektronik, Berlin, Germany(Bilge Imer, Shuji Nakamura, S. P. DenBaars and J. S. Speck) from UCSB, Applied Physics Letters. Vol.88,Number 161920, April 2006 
  • “Optical polarization anisotropy in strained a-plane GaN films on r-plane sapphire”, (Sandip Ghosh, Pranob Misra, and Holger T. Grahn) from Paul-Drude-Institut fur Festk¨orperelektronik, Berlin, Germany (Bilge Imer, Shuji Nakamura, S. P. DenBaars and J. S. Speck) from UCSB, Physica Status Solidi (b). Vol.243,Number 7, pp. 1441 – 1445, June 2006
  • “Stability of  m-plane GaN films grown by metalorganic chemical vapor deposition (MOCVD)”, Bilge Imer, Feng Wu, Michael D. Craven, James S. Speck and Steven P. DenBaars, Japanese Journal of Applied Physics, Vol. 45, No. 11, 8644, November 2006 
  • “Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy”,(Udo Behn,Pranob Misra, and Holger T. Grahn) from Paul-Drude-Institut fur Festk¨orperelektronik, Berlin, Germany(Bilge Imer, Shuji Nakamura, S. P. DenBaars and J. S. Speck) from UCSB, Physica Status Solidi A, Vol.204,Issue 1,pp. 299-303,January 2007
  • “Growth evolution in Sidewall Lateral Epitaxial Overgrowth (SLEO)”, Bilge Imer, Feng Wu, James S. Speck, Steven P. DenBaars, Journal of Crystal Growth, Vol. 306, 330-338, August 2007
  • “Electrical Characterization of low defect density nonpolar a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)”, Bilge Imer, Ben Haskell, Siddharth Rajan, Umesh K. Mishra, Shuji Nakamura, James S. Speck, and Steven P. DenBaars, Journal of Materials Research, Vol. 23, issue 2, pp. 551-555, February 2008
  • “Improved quality nonpolar a-plane GaN/AlGaN UV LEDs”, Bilge Imer, Matt Schmidt, Ben Haskell, Barry Zhong, Kwang-choong Kim, Feng Wu, Tom Mates, Stacia Keller, Shuji Nakamura, James S. Speck, and Steven P. DenBaars, Physica Status Solidi-a, Vol. 205, Issue 7, pp. 1705-1712, July 2008
  • “High responsivity a-plane GaN-based metal-semiconductor-metal photodetectors for polarization-sensitive applications”, A. Navarro, C. Rivera, J. Pereiro, E. Munoz,Bilge Imer, S. P. DenBaars, and J. S. Speck, Applied Physica Letters, Vol. 94, Issue 21, pp. 213512, May 2009